PART |
Description |
Maker |
KO3400 AO3400 |
VDS (V) = 30V ID= 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KI1902DL |
Drain-source voltage Vds 20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
KI1903DL |
Drain-source voltage Vds -20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
KI1400DL |
Drain-source voltage VDS 20 V Gate-source voltage VGS -12 V
|
TY Semiconductor Co., L...
|
SI9926BDY |
Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
RFD16N06LESM RFD16N06LESM9A |
Discrete Commercial N-Channel Power MOSFET, 60V, 16A, 0.047 Ohms @ VGS = 4.5V, TO-252/DPAK Package 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
|
TY Semiconductor Co., Ltd
|